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FTK1N60I

First Silicon
Part Number FTK1N60I
Manufacturer First Silicon
Description N-CHANNEL MOSFET
Published Jan 14, 2015
Detailed Description SEMICONDUCTOR TECHNICAL DATA FTK1N60P / F / D / I 1.0 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 1N60 is a ...
Datasheet PDF File FTK1N60I PDF File

FTK1N60I
FTK1N60I


Overview
SEMICONDUCTOR TECHNICAL DATA FTK1N60P / F / D / I 1.
0 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES * RDS(ON) = 9 .
6Ω@VGS =10V * Ultra Low gate charge (typical 5.
0nC) * Low reverse transfer capacitance (CRSS = typical 3.
5 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2 Drain Power MOSFET I: 1 D: 1 TO - 251 TO - 252 P: 1 TO - 220 F: 1 TO - 220F 1.
Gate 3 Source ORDERING INFORMATION Ordering Number FTK1N60P FTK1N60F FTK1N60I FTK1N60D Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F TO-251 TO-252 S: Source Pin Assignment 123 GD S GD S GD S GD S Packing Tube Tube Tube Tape Reel 2008.
1.
28 Revision No : 0 1/7 FTK1N60P / F / D / I ABSOLUTE MAXIMUM RATINGS (TC = 25˚C, unless otherwise specified) Power MOSFET PARAMET SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 1.
0 A Continuous Drain Current Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C ID 1.
0 A 0.
6 IDM 4 A Avalanche Energy Single Pulse (Note 3) Repetitive Limited by TJ(MAX) EAS EAR 65 mJ 2.
7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 V/ns Power Dissipation TC = 25°C Derate above 25°C PD 27 W 0.
21 W / ˚C Junction Temperature TJ +150 ˚C Operating Temperature TOPR -55 ~ +150 ˚C Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
˚C THERMAL DATA PARA...



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