DatasheetsPDF.com

SKiM501GD063DM

Semikron International
Part Number SKiM501GD063DM
Manufacturer Semikron International
Description Superfast NPT-IGBT Modules
Published Jan 19, 2015
Detailed Description SKiM501GD063DM SKiM® 5 Superfast NPT-IGBT Modules SKiM501GD063DM Features • NPT-IGBT with positive temperature coeffici...
Datasheet PDF File SKiM501GD063DM PDF File

SKiM501GD063DM
SKiM501GD063DM

Overview
SKiM501GD063DM SKiM® 5 Superfast NPT-IGBT Modules SKiM501GD063DM Features • NPT-IGBT with positive temperature coefficient of VCEsat • Short circuit, self limiting to 6 x IC • DBC substrate: AlN • Integrated temperature sensor Typical Applications* • Resonant inverters up to 100kHz • Inductive heating • Electronic welders at fSW up to 20kHz Absolute Maximum Ratings Symbol Conditions IGBT VCES IC ICnom ICRM VGES Tj = 150 °C ICRM = 2xICnom Ts = 25 °C Ts = 70 °C tpsc VGE ≤ 20 V Tj = 125 °C VCES ≤ 600 V Tj Inverse diode IF Tj = 150 °C Ts = 25 °C Ts = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-s) IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 12 mA VGE = 0 V VCE = 600 V Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V.
.
.
+ 20 V Tj = 25 °C VCC = 300 V IC = 600 A Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C per IGBT Values 600 515 392 600 1200 -20 .
.
.
20 10 -40 .
.
.
150 492 320 600 1200 4152 -40 .
.
.
150 700 -40 .
.
.
125 2500 Unit V A A A A V µs °C A A A A A °C A °C V min.
typ.
max.
Unit 2 2.
5 V 2.
4 2.
9 V 0.
9 1 V 0.
8 0.
9 V 2.
0 2.
7 m 2.
9 3.
3 m 4.
5 5.
5 6.
5 V 0.
1 0.
3 mA mA 27.
00 nF nF 2.
40 nF nC 1.
7  ns ns mJ ns ns mJ 0.
09 K/W GD © by SEMIKRON Rev.
0 – 18.
11.
2010 1 SKiM501GD063DM SKiM® 5 Superfast NPT-IGBT Modules SKiM501GD063DM Features • NPT-IGBT with positive temperature coefficient of VCEsat • Short circuit, self limiting to 6 x IC • DBC substrate: AlN • Integrated temperature sensor Typical Applications* • Resonant inverters up to 100kHz • Inductive heating • Electronic welders at fSW up to 20kHz Characteristics Symbol Conditions Inverse dio...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)