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H11G1

Fairchild Semiconductor
Part Number H11G1
Manufacturer Fairchild Semiconductor
Description HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
Published Mar 23, 2005
Detailed Description HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The H11GX series are photodarlington-type optically coupled optoco...
Datasheet PDF File H11G1 PDF File

H11G1
H11G1

Overview
HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers.
These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
H11G1 H11G2 H11G3 FEATURES • High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3 • High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA • Low leakage current at elevated temperature (maximum 100 µA at 80°C) • Underwriters Laboratory (UL) recognized File# E90700 APPLICATIONS • • • • • CMOS logic interface Telephone ring detector Low input TTL interface Power supply isolation Replace pulse transformer ANODE 1 6 BASE CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER NOTE All dimensions are in inches (millimeters) ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C Input-Output Isolation Voltage EMITTER Forward Input Current Reverse Input Voltage Forward Current - Peak (1µs pulse, 300pps) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage H11G1 H11G2 H11G3 Detector Power Dissipation @ TA = 25°C Derate above 25°C Symbol TSTG TOPR TSOL PD VISO IF VR IF(pk) PD Value -55 to +150 -55 to +100 260 for 10 sec 260 3.
5 5300 60 6.
0 3.
0 100 1.
8 Units °C °C °C mW mW/°C Vac(rms) mA V A mW mW/°C VCEO PD 100 80 55 200 2.
67 V mW mW/°C 7/21/00 200045A HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1, H11G2, H11G3 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.
) INDIVIDUAL COMPONENT CHARACTERISTICS Characteristic EMITTER Forward Voltage Forward Voltage Temp.
Coefficient Reverse Breakdown Voltage Junction Capacitance Reverse Leakage Current DETECTOR Breakdown Voltage Collector to Emitter Collector to Base Emitter to B...


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