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GP1201FSS18

Dynex Semiconductor
Part Number GP1201FSS18
Manufacturer Dynex Semiconductor
Description Single Switch Low V IGBT Module
Published Mar 23, 2005
Detailed Description GP1201FSS18 GP1201FSS18 Single Switch Low VCE(SAT) IGBT Module DS5411-1.1 January 2001 FEATURES s s s s s Low VCE(SAT...
Datasheet PDF File GP1201FSS18 PDF File

GP1201FSS18
GP1201FSS18


Overview
GP1201FSS18 GP1201FSS18 Single Switch Low VCE(SAT) IGBT Module DS5411-1.
1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.
6V 1200A 2400A External connection APPLICATIONS s s s s C1 Aux C C2 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G Aux E E1 E2 The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP1201FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications.
The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
External connection Fig.
1 Single switch circuit diagram Aux C Aux E E1 C1 G ORDERING INFORMATION Order As: GP1201FSS18 Note: When ordering, please use the whole part number.
E2 C2 Outline type code: F (See package details for further information) Fig.
2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures.
1/9 www.
dynexsemi.
com GP1201FSS18 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 2...


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