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GP200MKS12

Dynex Semiconductor
Part Number GP200MKS12
Manufacturer Dynex Semiconductor
Description IGBT Chopper Module Preliminary Information
Published Mar 23, 2005
Detailed Description GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES s s s s Internally C...
Datasheet PDF File GP200MKS12 PDF File

GP200MKS12
GP200MKS12

Overview
GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.
2 April 2001 FEATURES s s s s Internally Configured With Upper Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.
7V 200A 400A APPLICATIONS s s s s s High Power Choppers Motor Controllers Induction Heating Resonant Converters Power Supplies 1(A,E) 2(K) 3(C) 5(E1) 4(G) 9(C1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled.
The module incoporates high current rated freewheel diodes.
The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
11 10 8 9 Fig.
1 Chopper circuit diagram 1 2 3 6 7 5 4 ORDERING INFORMATION Order As: GP200MKS12 Note: When ordering, please use the whole part number.
Outline type code: M (See package details for further information) Fig.
2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures.
1/10 www.
dynexsemi.
com GP200MKS12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwis...


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