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GP201MHS18

Dynex Semiconductor
Part Number GP201MHS18
Manufacturer Dynex Semiconductor
Description Low VCE(SAT) Half Bridge IGBT Module
Published Mar 23, 2005
Detailed Description GP201MHS18 GP201MHS18 Low VCE(SAT) Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES s s s s s Low VCE(SAT) No...
Datasheet PDF File GP201MHS18 PDF File

GP201MHS18
GP201MHS18

Overview
GP201MHS18 GP201MHS18 Low VCE(SAT) Half Bridge IGBT Module DS5290-2.
1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.
6V 200A 400A APPLICATIONS s s s s 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) High Reliability Inverters Motor Controllers Traction Drives Resonant Converters 9(C1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP201MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications.
The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
11 10 8 9 Fig.
1 Half bridge circuit diagram 1 2 3 6 7 5 4 ORDERING INFORMATION Order As: GP201MHS18 Note: When ordering, please use the complete part number.
Outline type code: M (See package details for further information) Fig.
2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures.
1/10 www.
dynexsemi.
com GP201MHS18 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C u...


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