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GP2400ESM18

Dynex Semiconductor
Part Number GP2400ESM18
Manufacturer Dynex Semiconductor
Description Hi-Reliability Single Switch IGBT Module
Published Mar 23, 2005
Detailed Description GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES s s s s High Therma...
Datasheet PDF File GP2400ESM18 PDF File

GP2400ESM18
GP2400ESM18

Overview
GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.
1 January 2001 FEATURES s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 2400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.
5V 2400A 4800A APPLICATIONS s s s s External connection C1 Aux C C2 C3 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G The powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP2400ESM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.
This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
Aux E E1 E2 External connection E3 Fig.
1 Single switch circuit diagram ORDERING INFORMATION Order As: GP2400ESM18 Note: When ordering, please use the whole part number.
Outline type code: E (See package details for further information) Fig.
2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures.
1/10 www.
dynexsemi.
com GP2400ESM18 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise Sym...


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