DatasheetsPDF.com

GP400DDM12

Dynex Semiconductor
Part Number GP400DDM12
Manufacturer Dynex Semiconductor
Description Dual Switch IGBT Module Advance Information
Published Mar 23, 2005
Detailed Description GP400DDM12 GP400DDM12 Dual Switch IGBT Module Advance Information DS5503-1.0 October 2001 FEATURES s s s s High Therm...
Datasheet PDF File GP400DDM12 PDF File

GP400DDM12
GP400DDM12

Overview
GP400DDM12 GP400DDM12 Dual Switch IGBT Module Advance Information DS5503-1.
0 October 2001 FEATURES s s s s High Thermal Cycling Capability 400A Per Switch Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.
7V 400A 800A APPLICATIONS s s s s High Reliability Inverters Motor Controllers Traction Drives Resonant Converters 5(E1) 1(E1) 2(C2) 12(C2) 6(G1) 11(G2) 7(C1) 10(E2) 3(C1) 4(E2) The Powerline range of high power modules includes half bridge, dual, chopper and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The GP400DDM12 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.
This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
Fig.
1 Dual switch circuit diagram 5 6 3 7 8 1 ORDERING INFORMATION Order As: GP400DDM12 Note: When ordering, please use the whole part number.
10 12 9 4 11 2 Outline type code: D (See package details for further information) Fig.
2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures.
1/9 www.
dynexsemi.
com GP400DDM12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliabilit...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)