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GP400LSS18

Dynex Semiconductor
Part Number GP400LSS18
Manufacturer Dynex Semiconductor
Description Single Switch IGBT Module
Published Mar 23, 2005
Detailed Description GP400LSS18 GP400LSS18 Single Switch IGBT Module DS5305-2.0 November 2000 FEATURES s s s s Non Punch Through Silicon I...
Datasheet PDF File GP400LSS18 PDF File

GP400LSS18
GP400LSS18

Overview
GP400LSS18 GP400LSS18 Single Switch IGBT Module DS5305-2.
0 November 2000 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.
5V 400A 800A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters 5(E1) 3(G1) 1(C) 4(C1) 2(E) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP400LSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
Fig.
1 Single switch circuit diagram 4 ORDERING INFORMATION Order As: GP400LSS18 Note: When ordering, please use the whole part number.
5 3 2 1 Outline type code: L (See package details for further information) Fig.
2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures.
1/11 www.
dynexsemi.
com GP400LSS18 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max.
power dissipation Isolation voltage DC, Tca...


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