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GP401DDS18

Part Number	GP401DDS18
Manufacturer	Dynex Semiconductor
Description	Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
Published	Mar 23, 2005
Detailed Description	GP401DDS18 GP401DDS18 Low VCE(SAT) Dual Switch IGBT Module Preliminary Information DS5272-3.0 January 2001 FEATURES s ...
Datasheet	GP401DDS18 PDF File

Overview

GP401DDS18 GP401DDS18 Low VCE(SAT) Dual Switch IGBT Module Preliminary Information DS5272-3.
0 January 2001 FEATURES s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.
6V 400A 800A APPLICATIONS s s s s High Reliability Inverters Motor Controllers 12(C2) 2(C2) 4(E2) 1(E1) 7(C1) 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) Traction Drives Resonant Converters The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP401DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications.
The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.
The mo...

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GP401DDS18 Low VCE(SAT) Dual Switch IGBT Module Preliminary Information - Dynex Semiconductor

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