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C1980

Panasonic Semiconductor
Part Number C1980
Manufacturer Panasonic Semiconductor
Description 2SC1980
Published Jan 24, 2015
Detailed Description Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary ...
Datasheet PDF File C1980 PDF File

C1980
C1980

Overview
Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 5.
0±0.
2 Unit: mm 4.
0±0.
2 5.
1±0.
2 ■ Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.
7±0.
1 ■ Absolute Maximum Ratings Ta = 25°C 0.
7±0.
2 12.
9±0.
5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 120 V c type Collector-emitter voltage (Base open) VCEO 120 V n d ge.
ed Emitter-base voltage (Collector open) VEBO 7 2.
3±0.
2 V le sta ntinu Collector current IC 20 mA a e cyc isco Peak collector current ICP 50 mA life d, d Collector power dissipation PC 250 mW n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 °C 0.
45+–00.
.
115 2.
5+–00.
.
26 2.
5+–00.
.
26 0.
45+–00.
.
115 1 23 1: Emitter 2: Collector 3: Base TO-92-B1 Package in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Pa...


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