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TPC8033-H

Toshiba Semiconductor
Part Number TPC8033-H
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Jan 25, 2015
Detailed Description TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8033-H High Efficiency DC/DC Convert...
Datasheet PDF File TPC8033-H PDF File

TPC8033-H
TPC8033-H

Overview
TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8033-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • High-speed switching • Small gate charge: QSW = 9.
6 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) = 4.
0 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 62 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg 30 30 ±20 17 68 1.
9 1.
0 188 17 0.
09 150 −55 to 150 Note 1, Note 2, Note 3 and Note 4: See the next page.
Unit V V V A W W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.
085 g (typ.
) Circuit Configuration 8765 1234 Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Handle with care.
1 2007-12-25 Thermal Characteristics Characteristic Symb...


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