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MBRAF1100T3G

ON Semiconductor
Part Number MBRAF1100T3G
Manufacturer ON Semiconductor
Description Schottky Power Rectifier
Published Jan 28, 2015
Detailed Description MBRAF1100T3G Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schot...
Datasheet PDF File MBRAF1100T3G PDF File

MBRAF1100T3G
MBRAF1100T3G

Overview
MBRAF1100T3G Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact.
Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
These state−of−the−art devices have the following features: Features • Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction • High Blocking Voltage − 100 V • 150°C Operat...


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