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SI9945DY

TEMIC
Part Number SI9945DY
Manufacturer TEMIC
Description Dual N-Channel Enhancement-Mode MOSFET
Published Jan 28, 2015
Detailed Description Si9945DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 60 rDS(on) (W) 0.10 @ VGS = 10 V 0.20 @ VGS =...
Datasheet PDF File SI9945DY PDF File

SI9945DY
SI9945DY

Overview
Si9945DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 60 rDS(on) (W) 0.
10 @ VGS = 10 V 0.
20 @ VGS = 4.
5 V SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View ID (A) "3.
3 "2.
5 D1 D1 D2 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 60 "20 "3.
3 "2.
6 10 1.
7 2.
0 1.
3 –55 to 150 ...


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