DatasheetsPDF.com

STR-X6729

Sanken
Part Number STR-X6729
Manufacturer Sanken
Description Off-Line Quasi-Resonant Switching Regulators
Published Feb 5, 2015
Detailed Description STR-X6729 Off-Line Quasi-Resonant Switching Regulators Features and Benefits Description ▪ Quasi-resonant topology IC...
Datasheet PDF File STR-X6729 PDF File

STR-X6729
STR-X6729

Overview
STR-X6729 Off-Line Quasi-Resonant Switching Regulators Features and Benefits Description ▪ Quasi-resonant topology IC  Low EMI noise and soft The STR-X6729 is a quasi-resonant topology IC designed for switching SMPS applications.
It shows lower EMI noise characteristics ▪ Bottom-skip mode  Improved system efficiency over than conventional PWM solutions, especially at greater than the entire output load by avoiding increase of switching 2 MHz.
It also provides a soft-switching mode to turn on the frequency ▪ Standby mode  Lowers input power at very light output s load condition n ▪ Avalanche-guaranteed MOSFET  Improves system-level ig reliability and does not require VDSS derating s ▪ 450 VDSS / 0.
189 Ω RDS(on) e ▪ Various protections  Improved system-level reliability ▫ Pulse-by-pulse drain overcurrent limiting D ▫ Overvoltage Protection (bias winding voltage sensing), with latch w ▫ Overload Protection with latch e ▫ Maximum on-time limit N Package: 7-Pin TO-3P ended for Not to scale internal MOSFET at close to zero voltage (VDS bottom point) by use of the resonant characteristic of primary inductance and a resonant capacitor.
The package is a fully molded TO-3P, which contains the controller chip (MIC) and MOSFET, enabling output power up to 360 W at 120 VAC input.
The bottom-skip mode skips the first bottom of VDS and turns on the MOSFET at the second bottom point, to minimize an increase of operating frequency at light output load, improving systemlevel efficiency over the entire load range.
A standby mode is executed by clamping the secondary output.
In general applications, standby mode reduces input power.
The soft-start mode minimizes surge voltage and reduces power stress to the MOSFET and to the secondary rectifying diodes during the start-up sequence.
Various protections such as overvoltage, overload, overcurrent, maximum on-time protections and avalanche-energy guaranteed MOSFET secure good system-level reliability.
Continued on the next...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)