DatasheetsPDF.com

IRF1205

Part Number	IRF1205
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Feb 8, 2015
Detailed Description	PROVISIONAL l Advanced Process Technology l Dynamic dv/dt Rating l 175 °C Operating Temprature l Fast Switching l Fully...
Datasheet	IRF1205 PDF File

Overview

PROVISIONAL l Advanced Process Technology l Dynamic dv/dt Rating l 175 °C Operating Temprature l Fast Switching l Fully Avalanche Rated G Description Fifth Generation MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universely preferred for all commercial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Powe...

Similar Datasheet

IRF120 N-CHANNEL POWER MOSFET - Samsung semiconductor
IRF120 Power MOSFET - Intersil Corporation
IRF120 N-Channel Power MOSFET - Fairchild Semiconductor
IRF120 N-Channel MOSFET Transistor - Inchange Semiconductor
IRF1205 HEXFET Power MOSFET - International Rectifier
IRF121 N-Channel Power MOSFET - Fairchild Semiconductor
IRF121 N-Channel Power MOSFET - Samsung semiconductor
IRF121 N-Channel Power MOSFET - Intersil Corporation
IRF121 N-Channel MOSFET Transistor - Inchange Semiconductor
IRF122 N-Channel Power MOSFET - Fairchild Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)