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CY27H010

Part Number	CY27H010
Manufacturer	Cypress Semiconductor
Description	128K x 8 High-Speed CMOS EPROM
Published	Feb 8, 2015
Detailed Description	fax id: 30231CY27H010 CY27H010 128K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — ...
Datasheet	CY27H010 PDF File

Overview

fax id: 30231CY27H010 CY27H010 128K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max.
(commercial) — tAA = 35 ns max.
(military) • Low power — 275 mW max.
— Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in thewindowed package • EPROM technology • Capable of withstanding >2001V static discharge • Available in — 32-pin PLCC — 32-pin TSOP-I — 32-pin, 600-mil plastic or hermetic DIP — 32-pin hermetic LCC Functional Description The CY27H010 is a high-performance, 1-megabit CMOS EPROM organized in 128 Kbytes.
It is available in indus- Logic Block Diagram A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 ADDRESS DECODER PROGRAMMABLE ARRAY MULTIPLEXER POWER DOWN CE OUTPUT ENABLE OE DECODER try-standard 32-pin, 600-mil DIP, LCC, PLCC, and TSOP-I packages.
These devices offer high-density storage combined with 40-MHz performance.
The CY27H010 is available in windowed and opaque packages.
Windowed packages allow the device to be erased with UV light for 100% reprogrammability.
The CY27H010 is equipped with a power-down chip enable (CE) input and output enable (OE).
When CE is deasserted, the device powers down to a low-power stand-by mode.
The OE pin three-states the outputs without putting the device into stand-by mode.
While CE offers lower power, OE provides a more rapid transition to and from three-stated outputs.
The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.
The EPROM cell requires only 12.
75 V for the supervoltage and low programming current allows for gang programming.
The device allows for each memory location to be tested 100%, because each location is written to, erased, and repeatedly exercised prior to encapsulation.
Each device is also tested for AC performance to guarantee that the product will meet DC and AC specification limits after customer programming.
The CY27H010 is read by asserting bo...

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CY27H010 128K x 8 High-Speed CMOS EPROM - Cypress Semiconductor

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