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GLT5640AL16

Part Number	GLT5640AL16
Manufacturer	ETC
Description	4M X 16 CMOS Synchronous Dynamic RAM
Published	Mar 23, 2005
Detailed Description	GLT5160L16 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM ADVANCED FEATURES u Single 3.3 V ±0.3 V power supply u...
Datasheet	GLT5640AL16 PDF File

Overview

GLT5160L16 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM ADVANCED FEATURES u Single 3.
3 V ±0.
3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address) u CAS latency- 2 / 3 (programmable) u Burst length- 1 / 2 / 4 / 8 & Full Page (programmable) u Burst type- sequential / interleave (programmable) u Industrial grade available u u u • u • u u u Byte control by DQMU and DQML Column access - random Auto precharge / All bank precharge controlled by A[10] Auto refresh and Self refresh 4096 refresh cycles / 64 ms LVTTL Interface 400-mil, 50-Pin Thin Small Outline...

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GLT5640AL16 4M X 16 CMOS Synchronous Dynamic RAM - ETC

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