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K1875

Toshiba
Part Number K1875
Manufacturer Toshiba
Description 2SK1875
Published Feb 9, 2015
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications AM High Fr...
Datasheet PDF File K1875 PDF File

K1875
K1875

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications 2SK1875 Unit: mm · High |Yfs|: |Yfs| = 25 mS (typ.
) · Low Ciss: Ciss = 7.
5 pF (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -20 10 100 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2E1B Weight: 0.
006 g (typ.
) Characteristics Symbol Test Condition Gate leakage current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance IGSS VGS = -15 V, VDS = 0 V V (BR) GDS VDS = 0 V, IG = -100 mA IDSS (Note) VDS = 5 V, VGS = 0 V VGS (OFF) ïYfsï Ciss Crss VDS = 5 V, ID = 1 mA VDS = 5 V, VGS = 0 V, f = 1 kHz VDS ...


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