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IXTP24P085T

IXYS
Part Number IXTP24P085T
Manufacturer IXYS
Description Power MOSFET
Published Feb 13, 2015
Detailed Description TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA24P085T IXTP24P085T VDSS = ID25 = ≤RDS(on) - 8...
Datasheet PDF File IXTP24P085T PDF File

IXTP24P085T
IXTP24P085T

Overview
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA24P085T IXTP24P085T VDSS = ID25 = ≤RDS(on) - 85V - 24A 65mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-220 TO-263 Maximum Ratings - 85 - 85 V V ±15 V ±25 V - 24 A - 80 A - 24 A 200 mJ 83 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 260 1.
13/10 °C °C Nm/lb.
in.
3.
0 g 2.
5 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
- 85 V - 2.
5 - 4.
5 V ±50 nA - 3 μA -100 μA 65 mΩ G S ...


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