DatasheetsPDF.com

IXTA200N055T2-7

IXYS
Part Number IXTA200N055T2-7
Manufacturer IXYS
Description Power MOSFET
Published Feb 13, 2015
Detailed Description TrenchT2TM Power MOSFET Preliminary Technical Information IXTA200N055T2-7 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-...
Datasheet PDF File IXTA200N055T2-7 PDF File

IXTA200N055T2-7
IXTA200N055T2-7

Overview
TrenchT2TM Power MOSFET Preliminary Technical Information IXTA200N055T2-7 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.
2mΩ N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings 55 55 V V ± 20 V 200 A 160 A 500 A 100 A 600 mJ 360 W -55 .
.
.
+175 175 -55 .
.
.
+175 °C °C °C 300 °C 260 °C 3g Characteristic Values Min.
Typ.
Max.
55 V 2.
0 4.
0 V ±200 nA 5 μA 50 μA 3.
3 4.
2 mΩ TO-263 (7-lead) 1 7 Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain (TAB) Features z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche rated z Low RDS(on) Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - 12V Battery - ABS Systems z DC/DC Converters and Off-line UPS z Primary- Side Switch z High Current Switching Applications © 2008 IXYS CORPORATION, All rights reserved DS100081(11/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs VDS = 10V, ID = 60A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 30V, ID = 50A RG = 3.
3Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RthJC Characteristic Values Min.
Typ.
Max.
50 80 S 6970 1026 228 pF pF pF 26 ns 22 ns 49 ns 27 ns 109 nC 35 nC 24 nC 0.
42 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V I...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)