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IXTH240N055T

IXYS Corporation
Part Number IXTH240N055T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information TrenchMVTM Power MOSFET IXTH240N055T IXTQ240N055T N-Channel Enhancement Mode Avalan...
Datasheet PDF File IXTH240N055T PDF File

IXTH240N055T
IXTH240N055T

Overview
Preliminary Technical Information TrenchMVTM Power MOSFET IXTH240N055T IXTQ240N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 240 3.
6 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 55 55 ± 20 240 75 650 25 1.
0 V V V A A A A J 3 V/ns 480 W -55 .
.
.
+175 175 -40 .
.
.
+175 °C °C °C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in.
5.
5 g 6g Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Characteristic Values Min.
Typ.
Max.
55 V 2.
0 4.
0 V ± 200 nA 5 µA 250 µA 2.
7 3.
6 m Ω © 2006 IXYS CORPORATION All rights reserved TO-247 (IXTH) G DS TO-3P (IXTQ) (TAB) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS99715 (11/06) Symbol Test Conditions (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.
5 VDSS, ID = 25 A td(off) RG = 5 Ω (External) tf Qg(on) Qgs Qgd VGS= 10 V, VDS = 0.
5 VDSS, ID = 25 A RthJC RthCS Source-Drain Diode S...


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