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IXTA88N085T7

IXYS Corporation
Part Number IXTA88N085T7
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information TrenchMVTM Power MOSFET IXTA88N085T7 N-Channel Enhancement Mode Avalanche Rated VD...
Datasheet PDF File IXTA88N085T7 PDF File

IXTA88N085T7
IXTA88N085T7

Overview
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA88N085T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 V 88 A 11 mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA.
.
7) 85 V 85 V ± 20 88 240 25 500 3 V A A A mJ V/ns 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) 230 -55 .
.
.
+175 175 -40 .
.
.
+175 300 260 3 W Features °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C rated °C °C Low package inductance - easy to drive and to protect 175 °C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 100 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Note 1 Characteristic Values Min.
Typ.
Max.
85 V 2.
0 4.
0 V ± 200 nA 2 μA 150 μA 8 11 mΩ Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99641 (11/06) IXTA88N085T7 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 0.
5 ID25, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.
5 VDSS, ID = 25 A td(off) RG = 5 Ω (External) tf Qg(on) Qgs Qgd VGS= 10 V, VDS = 0.
5 VDSS, ID = 25 A RthJC Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) IS VGS = 0 V ISM Pulse width lim...


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