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IXTP152N085T

IXYS Corporation
Part Number IXTP152N085T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA152N085T IXTP...
Datasheet PDF File IXTP152N085T PDF File

IXTP152N085T
IXTP152N085T

Overview
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA152N085T IXTP152N085T VDSS = ID25 = RDS(on) ≤ 85 152 7.
0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Maximum Ratings 85 V 85 V ± 20 152 75 410 25 750 V A A A A mJ 3 V/ns 360 W -55 .
.
.
+175 175 -55 .
.
.
+175 °C °C °C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in.
3g 2.
5 g Characteristic Values Min.
Typ.
Max.
85 V 2.
0 4.
0 V ± 200 nA 25 µA 250 µA 5.
8 7.
0 m Ω TO-263 (IXTA) G S TO-220 (IXTP) (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99532 (11/06) IXTA152N085T IXTP152N085T Symbol Test Conditions (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.
5 VDSS, ID = 25 A td(off) RG = 5 Ω (External) tf Qg(on) Qgs Qgd VGS= 10 V, VDS = 0.
5 VDSS, ID = 25...


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