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IXTA200N085T7

IXYS Corporation
Part Number IXTA200N085T7
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information TrenchMVTM IXTA200N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated ...
Datasheet PDF File IXTA200N085T7 PDF File

IXTA200N085T7
IXTA200N085T7

Overview
Preliminary Technical Information TrenchMVTM IXTA200N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.
0 V A mΩ Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA.
.
7) VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Limited, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds 85 V 85 V ± 20 V 1 200 A 120 A 7 540 A Pin-out:1 - Gate (TAB) 25 A 1.
0 mJ 2, 3 - Source 4 - NC (cut) 5,6,7 - Source 3 V/ns TAB (8) - Drain 480 -55 .
.
.
+175 175 -55 .
.
.
+175 300 260 3 W °C Features °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C °C rated Low package inductance - easy to drive and to protect g 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Note 1 Characteristic Values Min.
Typ.
Max.
85 V 2.
0 4.
0 V ± 200 nA 5 μA 250 μA 4.
0 5.
0 mΩ Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved Downloaded from Elcodis.
com electronic components distributor DS99702 (11/06) IXTA200N085T7 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.
5 VDSS, ID = 25 A td(off) RG = 5 Ω (External) tf Qg(on) Qgs Qgd VGS= 10 V, VDS = 0.
5 VDSS, ID = 25 A RthJC Source-Drain D...


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