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IXTP160N10T

IXYS Corporation
Part Number IXTP160N10T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP1...
Datasheet PDF File IXTP160N10T PDF File

IXTP160N10T
IXTP160N10T

Overview
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.
0 V A mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings 100 100 ± 30 160 75 430 25 500 V V V A A A A mJ 3 V/ns 430 -55 .
.
.
+175 175 -55 .
.
.
+175 W °C °C °C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in.
3g 2.
5 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Characteristic Values Min.
Typ.
Max.
100 V 2.
5 4.
5 V ± 200 nA 5 μA 250 μA 6.
1 7.
0 mΩ G S TO-220 (IXTP) (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier © 2006 IXYS CORPORATION All rights reserved DS99650 (11/06) IXTA160N10T IXTP160N10T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.
5 VDSS, I...


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