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IXTH160N10T

IXYS Corporation
Part Number IXTH160N10T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N10T IXTQ1...
Datasheet PDF File IXTH160N10T PDF File

IXTH160N10T
IXTH160N10T

Overview
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N10T IXTQ160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.
0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 100 100 ± 30 160 75 430 25 500 V V V A A A A mJ 3 V/ns 430 W -55 .
.
.
+1...


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