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IXTC200N10T

IXYS Corporation
Part Number IXTC200N10T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Sy...
Datasheet PDF File IXTC200N10T PDF File

IXTC200N10T
IXTC200N10T

Overview
TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient Maximum Ratings 100 100 ± 30 V V V TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 101 75 500 40 1.
5 160 -55 .
.
.
+175 175 -55 .
.
.
+175 A A A A J W °C °C °C 1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds 300 °C 260 °C 50/60Hz, t = 1 minute, IISOL < 1mA, RMS 2500 Mounting force 11.
.
65 / 2.
5.
.
14.
6 V N/lb.
ISOPLUS220 2g Symbol Test Conditions ...


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