DatasheetsPDF.com

K13A65U

Toshiba Semiconductor
Part Number K13A65U
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Feb 14, 2015
Detailed Description TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Application...
Datasheet PDF File K13A65U PDF File

K13A65U
K13A65U

Overview
TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.
32 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 8.
0 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 650 ±30 13 26 40 86 13 4.
0 150 −55 to 150 Unit V V A W mJ A mJ °C °C Ф3.
2 ± 0.
2 10 ± 0.
3 A Unit: mm 2.
7 ± 0.
2 3.
9 3.
0 15.
0 ± 0.
3 2.
6 ± 0.
1 4.
5 ± 0.
2 2.
8 MAX.
13 ± 0.
5 1.
14 ± 0.
15 0.
69 ± 0.
15 Ф0.
2 M A 2.
54 2.
54 123 0.
64 ± 0.
15 1: Gate 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Internal Connection Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch-c) Rth (ch-a) 3.
125 62.
5 °C/W °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25 °C (initial),...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)