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STP31N65M5

STMicroelectronics
Part Number STP31N65M5
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Feb 15, 2015
Detailed Description STB31N65M5, STF31N65M5 STP31N65M5, STW31N65M5 Datasheet N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power MOSFETs in D2PAK...
Datasheet PDF File STP31N65M5 PDF File

STP31N65M5
STP31N65M5

Overview
STB31N65M5, STF31N65M5 STP31N65M5, STW31N65M5 Datasheet N-channel 650 V, 0.
124 Ω, 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO‑220FP, TO‑220 and TO-247 packages TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Features Order code VDS @ TJMAX RDS(on ) max.
STB31N65M5 STF31N65M5 STP31N65M5 710 V 0.
148 Ω STW31N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested ID 22 A Package D2PAK TO-220FP TO-220 TO-247 G(1) Applications • Switching applications S(3) Description AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout.
The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Product status link STB31N65M5 STF31N65M5 STP31N65M5 STW31N65M5 DS8912 - Rev 4 - April 2019 For further information contact your local STMicroelectronics sales office.
www.
st.
com STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Value Symbol Parameter D²PAK, TO-220, TO-247 VGS Gate-source voltage ±25 Drain current (continuous) at ID TC = 25 °C 22 Drain current (continuous) at ID TC = 100 °C 13.
9 IDM (2) Drain current (pulsed) 88 PTOT Total power dissipation at TC = 25 °C 150 VISO Insulation withstand voltage (RMS) from all three leads to external heat-sink (t = 1 s, TC = 25 °C) dv/dt (3) Peak diode recovery voltage slope 15 dv/dt (4) MOSFET dv/dt ruggedness 50 Tj Operating junction temperature range Tstg Storage temperature range -55 to 150 1.
Limited by package.
2.
Limited by maximum junction temperature.
3.
ISD ≤ 22 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS, VDD = 400 V.
4.
VDS ≤ 480 V.
TO-220FP 22 (1) 13.
9 (1) 88 (1) 30 2500 Unit V A A A W V V/ns °C Tabl...


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