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B80NF55L-08

STMicroelectronics
Part Number B80NF55L-08
Manufacturer STMicroelectronics
Description N-CHANNEL Power MOSFET
Published Feb 17, 2015
Detailed Description www.DataSheet4U.com STP80NF55L-08 STB80NF55L-08 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET ...
Datasheet PDF File B80NF55L-08 PDF File

B80NF55L-08
B80NF55L-08

Overview
www.
DataSheet4U.
com STP80NF55L-08 STB80NF55L-08 N-CHANNEL 55V - 0.
0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) STP80NF55L-08 STB80NF55L-08 55 V 55 V 0.
008Ω 0.
008Ω s TYPICAL RDS(on) = 0.
0065Ω s LOW THRESHOLD DRIVE s LOGIC LEVEL DEVICE ID 80 A 80 A 3 2 1 3 1 TO-220 D2PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.
The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM DataSheet4U.
com APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID (1) Drain Current (continuos) at TC = 25°C ID (1) Drain Current (continuos) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (2) Peak Diode Recovery voltage slope EAS(3) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Max.
Operating Junction Temperature (q) Pulse width limited by safe operating area April 2003 DataSheet4U.
com Value 55 55 ± 16 80 80 320 300 2 15 870 –55 to 175 175 (1) Current Limited by Package (2) ISD ≤80A, di/dt ≤500A/µs, VDD =40V Tj ≤ TJMAX.
(3) Starting Tj=25°C, ID=40A, VDD=40V Unit V V V A A A W W/°C V/ns mJ °C °C 1/8 DataShee www.
DataSheet4U.
com et4U.
com STP80NF55L-08 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl Maximum Lead Temperature For Soldering Purpose 0.
5 62.
5 300 ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min.
Typ.
Max.
V(BR)DSS Drain-source Breakdown Volta...


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