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B80NF55L-08

STMicroelectronics

N-CHANNEL Power MOSFET

www.DataSheet4U.com STP80NF55L-08 STB80NF55L-08 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET ...


STMicroelectronics

B80NF55L-08

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www.DataSheet4U.com STP80NF55L-08 STB80NF55L-08 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) STP80NF55L-08 STB80NF55L-08 55 V 55 V 0.008Ω 0.008Ω s TYPICAL RDS(on) = 0.0065Ω s LOW THRESHOLD DRIVE s LOGIC LEVEL DEVICE ID 80 A 80 A 3 2 1 3 1 TO-220 D2PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID (1) Drain Current (continuos) at TC = 25°C ID (1) Drain Current (continuos) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (2) Peak Diode Recovery voltage slope EAS(3) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Max. Operating Junction Temperature (q) Pulse width limited by safe operating area April 2003 DataSheet4U.com Value 55 55 ± 16 80 80 320 300 2 15 870 –55 to 175 175 (1) Current Limited by Package (2) ISD ≤80A, di/dt ≤500A/µ...




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