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LZP60N06

LITE-ON
Part Number LZP60N06
Manufacturer LITE-ON
Description N-Channel Transistor
Published Feb 17, 2015
Detailed Description LITE ON LITE-ON SEMICONDUCTOR LZP60N06 Features • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di...
Datasheet PDF File LZP60N06 PDF File

LZP60N06
LZP60N06

Overview
LITE ON LITE-ON SEMICONDUCTOR LZP60N06 Features • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area Application • DC-DC Converters • UPS & Monitors • High Power Swtching D G S GDS TO-220 BVDSS = 60V RDS(on) = 0.
016Ω Typ = 0.
014Ω ID = 60A Absolute Maximum Ratings ( TC = 25°C Unless Otherwise Specified) Symbol Characteristic VDSS ID IDM VGS EAS IAR Drain-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current (1) (2) (1) EAR Repetitive Avalanche Energy (1) dv/dt Peak Diode Recovery dv/dt (3) PD Total Power Dissipation (TC = 25°C) Linear Derating Factor TJ, TSTG Operating Junction and Storage Temperature Range TL Maximum Lead Temp.
for soldering purposes, 1/8" from case for 5-seconds Value 60 60 43 240 ± 20 600 60 12.
5 5.
5 125 0.
83 -55 to +175 300 Units V A A V mJ A mJ V/ns W W/°C °C °C Thermal Characteristics Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Junction-to-Case-to-Sink Junction-to-Ambient Typ.
Max.
Units -- 1.
2 0.
5 -- °C/W -- 62.
5 Rev 0.
September.
2006 LZP60N06 N-CHANNEL Electrical Characteristics (TC = 25°C unless otherwise specified) Symbol Characteristic Min.
Typ.
Max.
BVDSS ∆BVDSS/∆TJ VGS(th) Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage 60 -2.
5 -0.
08 -- --4.
5 IGSS Gate-Source Leakage, Forward Gate-Source Leakage, Reverse --- -- 100 -- -100 IDSS Drain-to-Source Leakage Current --- --- 1 10 RDS(on) Static Drain-Source On-State Resistance -- 0.
014 0.
016 gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge -- 40 -- -- 1745 227...


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