DatasheetsPDF.com

MJE2955T

Multicomp
Part Number MJE2955T
Manufacturer Multicomp
Description Complementary Power Transistors
Published Feb 21, 2015
Detailed Description MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-...
Datasheet PDF File MJE2955T PDF File

MJE2955T
MJE2955T

Overview
MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications.
Features: • Power dissipation-PD = 75W at TC = 25°C.
• DC current gain hFE = 20 (Minimum) at IC = 4.
0A.
• VCE(sat) = 1.
1V (Maximum) at IC = 4.
0A, IB = 400mA.
Pin 1.
Base 2.
Collector 3.
Emitter 4.
Collector (Case).
Dimensions Minimum Maximum A 14.
68 15.
31 B 9.
78 10.
42 C 5.
01 6.
52 D 13.
06 14.
62 E 3.
57 4.
07 F 2.
42 3.
66 G 1.
12 1.
36 H 0.
72 0.
96 I 4.
22 4.
98 J 1.
14 1.
38 K 2.
20 2.
97 L 0.
33 0.
55 M 2.
48 2.
98 O 3.
70 3.
90 Dimensions : Millimetres PNP MJE2955T NPN MJE3055T 10 Ampere Complemetary Silicon Power Transistors 60 Volts 75 Watts TO-220 Page 1 31/05/05 V1.
0 MJE2955T, 3055T Complementary Power Transistors Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristic Characteristic Thermal Resistance Junction to Case Symbol VCEO VCBO VEBO Rating 60 70 5.
0 IC 10 IB PD TJ, TSTG 6.
0 75 0.
6 -55 to +150 Symbol Rθjc Maximum 1.
67 Unit V A W W/°C °C Unit °C/W Figure - 1 Power Derating Page 2 31/05/05 V1.
0 MJE2955T, 3055T Complementary Power Transistors Electrical Characteristics (TC = 25°C unless otherwise noted) Parameter Symbol Minimum Off Characteristics Collector-Emitter Sustaining Voltage (1) (IC = 200mA, IB = 0) VCEO(sus) 60 Maximum - Collector Cut off Current (VCE = 30V, IB = 0) Collector Cut off Current (VCE = 70V, VBE(off) = 1.
5V) (VCE = 70V, VBE(off) = 1.
5V, TC = 150°C) Collector Cut off Current (VCB = 70V, IE = 0) (VCB = 70V, IE = 0, TC = 150°C) Emitter Cut off Current (VEB = 5.
0V, IC = 0) On Characteristics (1) DC Current Gain (IC = 4.
0A, VCE = 4.
0V) (IC = 10A, VCE = 4.
0V) Collector-Emitter Saturation Voltage (IC = 4.
0A, IB = 0.
4A) (IC = 10A, IB = 3.
3A) B...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)