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PZD502CYB

NIKO-SEM
Part Number PZD502CYB
Manufacturer NIKO-SEM
Description N-Channel MOSFET
Published Feb 28, 2015
Detailed Description NIKO-SEM N-Channel Logic Level Enhancement PZD502CYB Mode Field Effect Transistor SOT-523 Halogen-Free & Lead-Free P...
Datasheet PDF File PZD502CYB PDF File

PZD502CYB
PZD502CYB

Overview
NIKO-SEM N-Channel Logic Level Enhancement PZD502CYB Mode Field Effect Transistor SOT-523 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 450mΩ ID 0.
7A ESD Protected Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM PD Tj, Tstg 1.
GATE 2.
DRAIN 3.
SOURCE LIMITS 20 ±8 0.
7 0.
6 2 0.
4 0.
2 -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RθJA 280 °C/W 1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±8V VDS = 16V, VGS = 0V VDS = 10V, VGS = 0V, TJ = 55 °C VGS = 1.
8V, ID = 0.
35A VGS = 2.
5V, ID = 0.
5A VGS = 4.
5V, ID = 0.
6A VDS = 5V, ID =0.
6A LIMITS UNIT MIN TYP MAX 20 0.
35 0.
6 1 V ±30 µA 1 µA 10 384 850 274 765 mΩ 213 450 2S REV 0.
9 1 C-17-2 NIKO-SEM N-Channel Logic Level Enhancement PZD502CYB Mode Field Effect Transistor SOT-523 Halogen-Free & Lead-Free DYNAMIC Input Capacitance Output Capacitance Ciss Coss VGS = 0V, VDS = 10V, f = 1MHz 38 16 Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 ...


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