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PA502FMG

NIKO-SEM
Part Number PA502FMG
Manufacturer NIKO-SEM
Description P-Channel MOSFET
Published Feb 28, 2015
Detailed Description NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor PA502FMG SOT-23 Lead-Free PRODUCT SUMMARY V(...
Datasheet PDF File PA502FMG PDF File

PA502FMG
PA502FMG

Overview
NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor PA502FMG SOT-23 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -20 150m ID -3A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1% 1 :GATE 2 :DRAIN 3 :SOURCE LIMITS -20 ±12 -3 -1.
4 -10 1.
25 0.
8 -55 to 150 MAXIMUM 166 UNITS V V A W °C UNITS °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) STATIC VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±12V VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -4.
5V VGS = -4.
5V, ID =-2A VGS = -2.
5V, ID = -1A LIMITS UNIT MIN TYP MAX -20 -0.
5 -0.
9 -1.
2 V ±100 nA -1 µA -10 -6 A 100 150 m 180 250 Nov-03-2004 1 NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor PA502FMG SOT-23 Lead-Free Forward Transconductance1 gfs VDS = -5V, ID = -2A 16 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Ciss Coss Crss Qg Qg s Qgd td(on) tr td(off) tf VGS = 0V, VDS = -6V, f = 1MHz VDS = 0.
5V ,(BR)DSS VGS = -4.
5V, ID = -2A VDD = -10V ID ≅ -1A, VGS = -4.
5V, RG = 6 410 220 85 5.
8 10 0.
85 1.
70 13 36 42 34 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C...


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