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ME04N25-G

Matsuki
Part Number ME04N25-G
Manufacturer Matsuki
Description N-Channel MOSFET
Published Feb 28, 2015
Detailed Description N-Channel 250-V (D-S) MOSFET ME04N25/ME04N25-G GENERAL DESCRIPTION The ME04N25 is the N-Channel logic enhancement mode...
Datasheet PDF File ME04N25-G PDF File

ME04N25-G
ME04N25-G

Overview
N-Channel 250-V (D-S) MOSFET ME04N25/ME04N25-G GENERAL DESCRIPTION The ME04N25 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
FEATURES ● RDS(ON)≦1.
8Ω@VGS=10V ● RDS(ON)≦2.
0Ω@VGS=5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-252-3L) Top View e Ordering Information: ME04N25 (Pb-free) ME04N25-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25℃ TC=70℃ ID Pulsed Drain Current IDM Maximum Power Dissipation TC=25℃ TC=70℃ PD Operating Junction Temperature TJ Thermal Resistance-Junction to Case * RθJC * The device mounted on 1in2 FR4 board with 2 oz copper Maximum Ratings 250 ±20 3.
3 2.
6 13 31 20 -55 to 150 4.
0 Unit V V A A W ℃ ℃/W Feb,2012,Ver1.
1 01 N-Channel 250-V (D-S) MOSFET ME04N25/ME04N25-G Electrical Characteristics (TC =25℃ Unless Otherwise Specified) Symbol STATIC BVDSS VGS(th) IGSS IDSS Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-Resistance a VSD Diode Forward Voltage Limit VGS=0V, ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=±20V VDS=250V, VGS=0V VGS=10V, ID= 1.
5A VGS=5V, ID= 0.
8A IS=3A, VGS=0V Min Typ Max Unit 250 V 1.
5 3.
5 V ±100 nA 1 μA 1.
5 1.
55 1.
8 2.
0 Ω 0.
86 1.
2 V DYNAMIC Qg Total Gate Charge VD...


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