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SBD20C60F

Silan Microelectronics
Part Number SBD20C60F
Manufacturer Silan Microelectronics
Description 60V SCHOTTKY RECTIFIER
Published Feb 28, 2015
Detailed Description SBD20C60T/F_Datasheet 20A, 60V SCHOTTKY RECTIFIER DESCRIPTION SBD20C60T/F is schottky rectifier fabricated in silicon ...
Datasheet PDF File SBD20C60F PDF File

SBD20C60F
SBD20C60F

Overview
SBD20C60T/F_Datasheet 20A, 60V SCHOTTKY RECTIFIER DESCRIPTION SBD20C60T/F is schottky rectifier fabricated in silicon epitaxial planar technology, Guard ring construction for over voltage protection and enhanced long term reliability.
Typical applications are in switching power supplies, converter, free-wheeling diodes, and reverse battery protection.
FEATURES ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low Forward Voltage Drop ∗ 125°C Operating Junction Temperature ORDERING SPECIFICATIONS Part No.
SBD20C60T SBD20C60F Package TO-220-3L TO-220F-3L Marking SBD20C60T SBD20C60F Material Pb free Pb free ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.
3ms Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 60 20 150 -40~125 -40~125 THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Symbol RθJC Value 2.
0 Packing Tube Tube Unit V A A °C °C Unit °C/W HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
1 2010.
10.
22 Page 1 of 5 SBD20C60T/F_Datasheet ELECTRICAL CHARACTERISTICS (Per Leg) Parameters Forward Voltage Reverse Current Symbol VF VF VF VF IR IR Test Condition IF=10 A；TJ=25°C IF =10 A；TJ =125°C IF =20 A；TJ =25°C IF =20 A；TJ =125°C VR=60V；TJ =25°C VR=60V； TJ =125°C Min.
------- Max.
0.
71 0.
61 0.
85 0.
71 100 15 Unit V V V V μA mA CHARACTERISTIC CURVES Figure 1.
Typical forward voltage 100 Figure 2.
Typical reverse current 100 10 1 25℃ 0.
1 75℃ 125℃ 0.
01 0 0.
1 0.
2 0.
3 0.
4 0.
5 0.
6 0.
7 0.
8 VF(V) 10 1 25℃ 100℃ 0.
1 125℃ 0.
01 0.
001 0 10 20 30 40 VR(V) 50 60 70 10000 Figure 3.
Typical capacitance 1000 f=1MHz 100 0.
1 1 10 VR(V) 100 HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
1 2010.
10.
22 Page 2 of 5 PACKAGE OUTLINE TO-220-3L SBD20C60T/F_Datasheet UNIT: mm TO-22...


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