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SVD840F

Silan Microelectronics
Part Number SVD840F
Manufacturer Silan Microelectronics
Description 500V N-CHANNEL MOSFET
Published Feb 28, 2015
Detailed Description SVD840T/F_Datasheet 8A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD840T/F is an N-channel enhancement mode power MOS...
Datasheet PDF File SVD840F PDF File

SVD840F
SVD840F

Overview
SVD840T/F_Datasheet 8A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD840T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ 8A,500V,RDS(on)（typ）=0.
62Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING INFORMATION Part No.
SVD840T SVD840F Package TO-220-3L TO-220F-3L Marking SVD840T SVD840F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C, TO-220 Package) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg Rating SVD840T SVD840F 500 ±30 8.
0 32 135 49 1.
08 0.
39 686 150 -55～+150 Unit V V A A W W/°C mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
4 2011.
01.
17 Page 1 of 7 SVD840T/F_Datasheet THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVD840T SVD840F 0.
93 2.
56 62.
5 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate C...


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