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SVD830D

Silan Microelectronics
Part Number SVD830D
Manufacturer Silan Microelectronics
Description 500V N-CHANNEL MOSFET
Published Feb 28, 2015
Detailed Description SVD830T/F/D_Datasheet 4.5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD830T/F/D is an N-channel enhancement mode pow...
Datasheet PDF File SVD830D PDF File

SVD830D
SVD830D

Overview
SVD830T/F/D_Datasheet 4.
5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ 4.
5A,500V,RDS(on(typ)=1.
3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No.
SVD830T SVD830F SVD830D SVD830DTR Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD830T SVD830F SVD830D SVD830D Material Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tape & Reel ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C, TO-220) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg SVD830T 87.
5 0.
7 Rating SVD830F 500 ±30 4.
5 18 42 0.
34 256 -55～+150 -55～+150 SVD830D 76 0.
61 Unit V V A A W W/°C mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
3 2010.
10.
21 Page 1 of 8 SVD830T/F/D_Datasheet THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVD830T 1.
43 62.
5 Rating SVD830F 2.
94 120 SVD830D 1.
64 110 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer C...


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