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SVD730F

Silan Microelectronics
Part Number SVD730F
Manufacturer Silan Microelectronics
Description 400V N-CHANNEL MOSFET
Published Feb 28, 2015
Detailed Description SVD730D/F/T_Datasheet 5.5A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD730D/F/T is an N-channel enhancement mode pow...
Datasheet PDF File SVD730F PDF File

SVD730F
SVD730F

Overview
SVD730D/F/T_Datasheet 5.
5A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD730D/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES ∗ 5.
5A,400V,RDS(on)（typ）=0.
9Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING INFORMATION Part No.
SVD730T SVD730F SVD730D SVD730DTR Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD730T SVD730F SVD730D SVD730D Material Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tape & Reel ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(TC=25°C, TO-220) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD EAS TJ Tstg SVD730D 77 0.
62 Ratings SVD730F 400 ±30 5.
5 33 0.
26 313 -55～+150 -55～+150 SVD730T 100 0.
8 Unit V V A W W/°C mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
0 2010.
12.
10 Page 1 of 8 SVD730D/F/T_Datasheet THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVD730D 1.
61 110 Ratings SVD730F 3.
85 120 SVD730T 1.
25 62.
5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Tu...


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