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PFV218N50

Fairchild Semiconductor
Part Number PFV218N50
Manufacturer Fairchild Semiconductor
Description 500V N-Channel MOSFET
Published Mar 4, 2015
Detailed Description FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET QFET® FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features • 550V @TJ =...
Datasheet PDF File PFV218N50 PDF File

PFV218N50
PFV218N50


Overview
FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET QFET® FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features • 550V @TJ = 150°C • Typ.
RDS(on) = 0.
265Ω @VGS = 10 V • Low gate charge (typical 42 nC) • Low Crss (typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switche...



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