DatasheetsPDF.com

G30N60HS

Infineon
Part Number G30N60HS
Manufacturer Infineon
Description High Speed IGBT
Published Mar 4, 2015
Detailed Description SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circu...
Datasheet PDF File G30N60HS PDF File

G30N60HS
G30N60HS

Overview
SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution PG-TO-220-3-1 • High ruggedness, temperature stable behaviour • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ C G E PG-TO-247-3 Type VCE IC Eoff) Tj Marking Package SGP30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1 SGW30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-247-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp<1µs, D<0.
05) Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s VCE IC ICpuls - EAS VGE tSC Ptot Tj , Tstg Tj(tl) - 600 41 30 112 112 165 ±20 ±30 10 250 -55.
.
.
+150 175 260 Unit V A mJ V µs W °C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors 1 Rev.
2.
4 Nov 09 SGP30N60HS SGW30N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Symbol Conditions RthJC RthJA PG-TO-220-3-1 PG-TO-247-3-21 Max.
Value 0.
5 62 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitte...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)