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S6B60KD

International Rectifier
Part Number S6B60KD
Manufacturer International Rectifier
Description IRGS6B60KD
Published Mar 5, 2015
Detailed Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Tec...
Datasheet PDF File S6B60KD PDF File

S6B60KD
S6B60KD

Overview
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits • Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C G E n-channel PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600V IC = 7.
0A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ.
= 1.
8V Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC...


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