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TPH4R003NL

Toshiba
Part Number TPH4R003NL
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Mar 7, 2015
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R003NL 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TPH4R003NL PDF File

TPH4R003NL
TPH4R003NL

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R003NL 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 3.
9 nC (typ.
) (3) Low drain-source on-resistance: RDS(ON) = 4.
9 mΩ (typ.
) (VGS = 4.
5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
2 mA) 3.
Packaging and Internal Circuit TPH4R003NL 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 Drain current (DC) Drain current (DC) Drain current (pulsed) (Silicon limit) (Tc = 25 ) (t = 1 ms) (Note 1), (Note 2) (Note 1) (Note 1) ID ID IDP 68 A 40 177 Power dissipation Power dissipation Power dissipation (Tc = 25 ) (t = 10 s) (t = 10 s) (Note 3) (Note 4) PD PD PD 36 W 2.
8 1.
6 Single-pul...


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