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TPH5900CNH

Toshiba
Part Number TPH5900CNH
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Mar 7, 2015
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TPH5900CNH 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TPH5900CNH PDF File

TPH5900CNH
TPH5900CNH

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH5900CNH 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 2.
6 nC (typ.
) (3) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ.
) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (5) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
2 mA) 3.
Packaging and Internal Circuit TPH5900CNH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 150 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 18 A Drain current (DC) (Continuous) (Note 1) ID 9.
0 Drain current (pulsed) (t = 1 ms) (Note 1) IDP 35 Power dissipation (Tc = 25 ) PD 42 W Power dissipation (t = 10 s) (Note 3) PD 2.
8 Power dissipation (t = 10 s) (Note 4) PD 1.
6 Single-pulse avalanche energy (Note 5) EAS 36 mJ Avalanche current IAR 9.
0 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2013-10-07 Rev.
1.
0 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance (Tc = 25 ) (t = 10 s) (Note 3) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) N...


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