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TPH1500CNH

Toshiba
Part Number TPH1500CNH
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Mar 7, 2015
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1500CNH 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TPH1500CNH PDF File

TPH1500CNH
TPH1500CNH

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1500CNH 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 8.
2 nC (typ.
) (3) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.
) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (5) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1.
0 mA) 3.
Packaging and Internal Circuit TPH1500CNH SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain Start of commercial production 2014-12 1 2014-11-07 Rev.
4.
0 TPH1500CNH 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 150 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 50 A Drain current (DC) (Continuous) (Note 1) ID 38 Drain current (pulsed) (t = 1 ms) (Note 1) IDP 148 Power dissipation (Tc = 25 ) PD 78 W Power dissipation ...


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