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FZT749

Fairchild Semiconductor
Part Number FZT749
Manufacturer Fairchild Semiconductor
Description PNP Low Saturation Transistor
Published Mar 23, 2005
Detailed Description FZT749 Discrete Power & Signal Technologies July 1998 FZT749 C E B C SOT-223 PNP Low Saturation Transistor These d...
Datasheet PDF File FZT749 PDF File

FZT749
FZT749

Overview
FZT749 Discrete Power & Signal Technologies July 1998 FZT749 C E B C SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FZT749 25 35 5 3 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic FZT749 PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient 2 62.
5 W °C/W Units © 1998 Fairchild Semiconductor Corporation Page 1 of 2 fzt749.
lwpPrPC 7/10/98 revB FZT749 PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 µA IE = 100 µA VCB = 30 V VCB = 30 V, TA=100°C IEBO Emitter Cutoff Current VEB = 4V 25 35 5 100 10 100 V V V nA uA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 50 mA, VCE = 2 V IC = 1 A, VCE = 2 V IC = 2 A, VCE = 2 V IC = 6 A, VCE = 2 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 100 mA IC = 3 A, IB = 300 mA VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 1 A, IB = 100 mA IC = 1 A, VCE = 2 V 70 100 75 15 300 600 1.
25 1 V V mV 300 - SMALL SIGNAL CHARACTERISTICS ...


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