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SUP90N06-5m0P

Vishay
Part Number SUP90N06-5m0P
Manufacturer Vishay
Description N-Channel 60-V (D-S) MOSFET
Published Mar 9, 2015
Detailed Description SUP90N06-5m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 60 0.005 at VGS ...
Datasheet PDF File SUP90N06-5m0P PDF File

SUP90N06-5m0P
SUP90N06-5m0P

Overview
SUP90N06-5m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 60 0.
005 at VGS = 10 V ID (A) 90d Qg (Typ) 105 TO-220AB FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested APPLICATIONS • Power Supply - Secondary Synchronous Rectification • Industrial • OR-ing D RoHS COMPLIANT GD S Top View Ordering Information: SUP90N06-5m0P-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.
1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 60 ± 20 90d 90d 240 70 245 300b 3.
75 - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a.
Duty cycle ≤ 1 %.
b.
See SOA curve for voltage derating.
c.
When Mounted on 1" square PCB (FR-4 material).
d.
Package limited.
Document Number: 74641 S-71687-Rev.
A, 13-Aug-07 Symbol RthJA RthJC Limit 40 0.
5 Unit °C/W www.
vishay.
com 1 SUP90N06-5m0P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C VDS = 60 V, VGS = 0 V, TJ = 150 °C On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 °C Forward Transconductancea Dynamicb gfs VDS = 15 V, ID = 20 A Input Capacitance Ciss Output Capacitance Coss VGS = 0 V...


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