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NTD4857N

ON Semiconductor
Part Number NTD4857N
Manufacturer ON Semiconductor
Description Power MOSFET
Published Mar 9, 2015
Detailed Description NTD4857N Power MOSFET 25 V, 78 A, Single N--Channel, DPAK/IPAK Features • Trench Technology • Low RDS(on) to Minimize ...
Datasheet PDF File NTD4857N PDF File

NTD4857N
NTD4857N

Overview
NTD4857N Power MOSFET 25 V, 78 A, Single N--Channel, DPAK/IPAK Features • Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • VCORE Applications • DC--DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain--to--Source Voltage Gate--to--Source Voltage Continuous Drain Current RθJA (Note 1) VDSS 25 V VGS ±20 V TA = 25°C ID 15 A TA = 85°C 11.
7 Power Dissipation RθJA (Note 1) Continuous Drain Current RθJA (Note 2) Power Dissipation RθJA (Note 2) Continuous Drain Current RθJC (Note 1) TA = 25°C Steady State TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C PD ID PD ID 2.
1 W 12 A 9.
3 1.
31 W 78 A 61 Power Dissipation RθJC (Note 1) Pulsed Drain Current TC = 25°C tp=10ms TA = 25°C PD IDM 56.
6 W 156 A Current Limited by Package TA = 25°C Operating Junction...


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