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IS61LV12816LL

Integrated Silicon Solution
Part Number IS61LV12816LL
Manufacturer Integrated Silicon Solution
Description 128K x 16 HIGH-SPEED CMOS STATIC RAM
Published Mar 10, 2015
Detailed Description IS61LV12816L IS61LV12816LL ISSI® 128K x 16 HIGH-SPEED CMOS STATIC RAM PRELIMINARYINFORMATION WITH 3.3V SUPPLY JULY 2...
Datasheet PDF File IS61LV12816LL PDF File

IS61LV12816LL
IS61LV12816LL


Overview
IS61LV12816L IS61LV12816LL ISSI® 128K x 16 HIGH-SPEED CMOS STATIC RAM PRELIMINARYINFORMATION WITH 3.
3V SUPPLY JULY 2002 FEATURES • High-speed access time: IS61LV12816L: 8, 10 ns IS61LV12816LL: 12, 15 ns • Operating Current: IS61LV12816L: 50mA (typ.
) IS61LV12816LL: 25mA (typ.
) • Stand by Current: IS61LV12816L: 500µA (typ.
) IS61LV12816LL: 250µA(typ.
) • TTL and CMOS compatible interface levels • Single 3.
3V power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61LV12816L/IS61LV12816LL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits.
It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.
When CE is HIGH (deselected), the device assumes a standby...



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